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由于材料弹性的各向异性与表面能的各向异性,不同的生长方向或生长面,量子点有不同的力学性能与行为.本文基于各向异性弹性理论的有限元方法,以金字塔型自组织InAs/GaAs半导体量子点为研究对象,分别在7个常见的生长方向或生长面上,对其应变能和应变弛豫能、自由能等进行了分析计算,得到了这些能量随生长方向的变化规律.结果表明(211)量子点应变弛豫能最大,而(100)量子点应变弛豫能最小.这些结果可为可控制备量子点提供理论参考.
Due to the anisotropy of material elasticity and the anisotropy of surface energy, different growth direction or growth surface, quantum dots have different mechanical properties and behaviors.In this paper, based on the finite element method of anisotropic elasticity theory, InAs / GaAs semiconductor quantum dots as the research object, respectively, in seven common growth direction or growth surface, the strain energy and strain relaxation energy, free energy and other were analyzed and calculated, the energy of these changes with the growth direction The results show that the strain relaxation energy of (211) quantum dots is the maximum, and the strain relaxation energy of (100) quantum dots is the smallest. These results can provide theoretical reference for controllable quantum dots.