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本文介绍了一个在77-800K范围可变温度下进行离子注入和就地电学测量的靶室。该靶室曾为金属、硅化物以及某些超导材料的离子束混合实验在10W左右的束流功率下使用了几年,温度漂移在±3K。
This article presents a target chamber for ion implantation and in-situ electrical measurements at a variable temperature in the range of 77-800K. The target chamber was used for ion beam mixing experiments of metals, silicides and some superconducting materials at a beam power of about 10 W for several years with a temperature drift of ± 3K.