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在酸性溶液中利用恒电位沉积法在导电玻璃(ITO)上沉积Cu_2O薄膜,并以KCl为添加剂对其进行掺杂,采用场发射扫描电子显微镜(FESEM)和X射线衍射谱(XRD)等手段研究了氯掺杂对Cu_2O表面形貌和晶体结构的影响。紫外-可见吸收光光谱确定得到的Cu_2O和Cl掺杂Cu_2O(Cu_2O-Cl)样品的禁带宽度分别为1.98和1.95eV。根据表面光电压谱和相位谱,掺杂前后的Cu_2O均为n型,Cu_2O-Cl有更强的表面光电压响应。场诱导表面光电压谱结果表明未掺杂Cl的Cu_2O在加负偏压时易形成反型层;氯离子的掺杂引入杂质能级可以提高n型导电性。光电化学性能测试发现,以Cu_2O、Cu_2O-Cl为光阳极组成的光化学太阳电池,在大气质量AM 1.5G、100mW/cm~2标准光强作用下光电转换效率分别为0.12%和0.51%。
The Cu 2 O thin films were deposited on conductive glass (ITO) by potentiostatic deposition in acid solution and doped with KCl as additives. The emission spectra were characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) The effects of chlorine doping on the surface morphology and crystal structure of Cu_2O were investigated. The bandgap of Cu_2O and Cl_2O_ (Cu_2O-Cl) samples determined by UV-Vis absorption spectra were 1.98 and 1.95eV, respectively. According to the surface photovoltage spectra and phase spectra, Cu_2O before and after doping are all n-type and Cu_2O-Cl has a stronger surface photovoltage response. Field-induced surface photovoltage spectroscopy results show that undoped Cl-Cu 2 O tends to form an inversion layer when negatively biased. Chloride doping introduces an impurity level to improve n-type conductivity. Photoelectrochemical tests showed that the photoelectric conversion efficiencies of Cu 2 O and Cu 2 O-Cl as photoanodes were 0.12% and 0.51% under AM 1.5G and 100mW / cm 2 respectively.