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对不同组分、阱宽和垒宽的锗硅单量子阱和多量子阶样品的Ｃ－Ｖ特性及其与温度的关系进行了测量，并用数值方法解油松方程模拟计算了单量子阱样品的Ｃ－Ｖ特性及其Ｃ－Ｖ载流于浓度分布．实验和模拟计算的结果均表明，Ｃ－Ｖ载流子浓度分布在量子阱位置有一个浓度较高的峰值，它反映了被限制在阱中的载流子的积累，峰高随着量子阶异质界面的能带偏移的增加而增加．低温时由于阱中载流子的热发射几率变小，阱中载流于浓度的变化跟不上测试电压的频率，造成电容值显著变小．
The C-V properties of different compositions, well width and base width of Ge-Si single quantum well and multi-quantum-order samples were measured and their relationship with temperature was measured. The single quantum well sample C-V characteristics and its C-V carrier concentration distribution. Both experimental and simulative calculations show that the C-V carrier concentration distribution has a high concentration peak at the position of the quantum well, which reflects the accumulation of carriers confined in the well with peak height as the quantum order The heterogeneous interface increases with increasing band offset. At low temperatures, as the probability of carrier thermal emission in the trap becomes smaller, the change in concentration in the trap can not keep up with the frequency of the test voltage, resulting in a significantly smaller capacitance value.