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报道了高纯Ge单晶中剩余浅施主的高分辨率光热电离光谱。不仅观察到P、As和D(Li,O)复合施主化较低基态到各激发态的一系列较强尖锐跃迁谱线还观察到P及As从三重基态1S(T_2)到各激发态的较弱跃迁谱线。由此更精确地得出P、As的1S基态分裂值4A分别为22.74cm~(-1)(2.82meV)和33.980m~(-1)(4.21meV)。
The high resolution photothermal ionization spectra of the remaining shallow donors in high purity Ge single crystals are reported. Not only the series of strong sharp transitions from the lower ground state to the various excited states of the complex donor P, As and D (Li, O) complexes were also observed, it was also observed that P and As transitioned from the triplet ground state 1S (T 2) to the excited states Weak transition line. Therefore, the 1S ground state splitting values 4A of P and As are more accurately obtained as 22.74cm -1 (2.82meV) and 33.980m -1 (4.21meV), respectively.