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采用锗－硅复合靶射频反应溅射技术，制备了ＧｅＯ_２含量ｘ＝０％～８１％的非晶ＧｅＯ_２－ＳｉＯ_２复合薄膜．用自动椭偏仪进行测量，得到复合氧化物薄膜中ＧｅＯ_２的含量．用傅里叶变换红外光谱仪测得此种薄膜的红外吸收谱随ＧｅＯ_２含量的变化关系，并讨论了其结构特征．
An amorphous GeO_2-SiO_2 composite film with GeO_2 content x = 0% -81% was prepared by RF-reactive sputtering with germanium-silicon composite target. Measured with an automatic ellipsometer to obtain the content of GeO2 in the composite oxide thin film. The infrared absorption spectrum of the film was measured by Fourier transform infrared spectroscopy and the relationship between the infrared absorption spectrum and the content of GeO2 was discussed. The structural characteristics were also discussed.