利用红外吸收 (IR)谱和 X射线光电子谱 (XPS)对富氧氮氧化硅 (oxygen- rich Si Ox Ny)及其在 6 0 0、75 0和90 0℃下退火后样品的微结构进行了研究 .实验中除观察到 N、H的释放外 ,首次发现退火会导致 Si Ox Ny 中 O的释放 ,同时还发现退火温度不同 ,H、O、N元素的释放量以及微结构的变化都不相同 ,根据这些现象 ,提出了 5个化学反应过程并予以解释 The microstructure of oxygen-rich Si Ox Ny and its annealed samples at 600, 7500 and 90 ° C was investigated by infrared (IR) and X-ray photoelectron spectroscopy (XPS) In addition to the release of N and H, we found for the first time that annealing will lead to the release of O in Si Ox Ny, and we also find that the annealing temperature, the release of H, O and N, and the microstructural changes Not the same, according to these phenomena, put forward five chemical reaction process and explain