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基于SiC衬底成功研制X波段0.25μm栅长带有Γ栅场板结构的AlGaN/GaN HEMT,对比T型栅结构器件,研究了Γ栅场板引入对器件直流、小信号及微波功率特性的影响。结果表明,Γ栅场板结构减小器件截止频率及振荡频率,但明显改善器件膝点电压和输出功率密度。针对场板长度分别为0.4、0.7、0.9、1.1μm,得出一定范围内增加场板长度,器件输出功率大幅度提高,并结合器件小信号模型提参结果分析原因。在频率8 GHz下,总栅宽1 mm,场板长度0.9μm的器件,连续波输出功率密度7.11 W/mm,功率附加效率(PAE)35.31%,相应线性增益10.25 dB。
Based on the SiC substrate, an AlGaN / GaN HEMT with X-band 0.25μm gate length and a Γ gate field plate structure was successfully fabricated. Compared with T-type gate structure, the effect of the Γ gate field plate on DC, small signal and microwave power characteristics influences. The results show that the structure of the Γ gate field plate reduces the cut-off frequency and oscillation frequency of the device, but obviously improves the device knee voltage and output power density. For the field plate length of 0.4,0.7,0.9,1.1μm, obtained within a certain range to increase the length of the field plate, the device output power increased significantly, combined with the small signal model of the device results of the analysis of the reason. At a frequency of 8 GHz, a device with a total gate width of 1 mm and a field plate length of 0.9 μm has a continuous wave output power density of 7.11 W / mm, a power added efficiency (PAE) of 35.31% and a corresponding linear gain of 10.25 dB.