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研制了10kV高压反向开关晶体管(RSD)开关组件。在重复频率0.2Hz、峰值电流约107kA、峰值功率约1GW、单次传输电荷约20C、单次传输能量约100kJ条件下,实验次数达50 000多次;主要研究了RSD开关的静态伏安特性随实验次数的变化趋势。采用数值分析的方法,统计拟合得到了长脉冲大电流条件下RSD开关的寿命模型,并依据失效判据初步预估RSD开关的寿命可达107次。
Developed 10kV high-voltage reverse switching transistor (RSD) switching components. The repetition frequency of 0.2Hz, the peak current of about 107kA, the peak power of about 1GW, a single charge of about 20C, a single transmission energy of about 100kJ conditions, the number of experiments more than 50,000 times; mainly studied the static volt-ampere characteristics of the RSD switch Varies with the number of experiments. Using the method of numerical analysis, the life model of RSD switch under long pulse high current condition is obtained through statistical fitting. According to the failure criterion, the life expectancy of RSD switch can be estimated as 107 times.