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采用射频(radio frequency,RF,13.56.MHz)和直流偏压双重激励源,在等离子增强化学气相沉积(plasma-enhanced chemical vapor deposition,PECVD)系统下制备了康宁玻璃7059衬底上的氢化纳米硅薄膜.保持射频功率、反应室气压、直流偏压值和衬底温度等工艺参数不变的情况下,主要改变硅烷稀释度(silane concentration,SC)从1.%到0.5.%.当SC减小时,薄膜的晶态比Xc反而出现了增大现象,表明较低的SC有利于薄膜结构中晶态成分的形成.当SC减小到0.5.%时,Xc则出现最大值54.2.%.文中具有不同薄膜晶态比的样品力学性能采用美国Hysitron公司的TriboIndenter纳米压痕系统进行测量,薄膜的杨氏模量和硬度值利用Oliver和Pharr的解析方法得出.结果表明:当薄膜的Xc从50.5%增大到54.2%时,薄膜的杨氏模量和硬度值都大大增加,这种现象的产生是由于不同Xc的薄膜具有不同的晶态微结构,因此薄膜的Xc值在很大程度上决定薄膜的力学性能.
Hydrogenated nano-silicon on Corning glass 7059 substrate was prepared by plasma-enhanced chemical vapor deposition (PECVD) using radio frequency (RF, 13.56 MHz) and DC bias dual excitation sources The major changes in silane concentration (SC) ranged from 1.% to 0.5%, while keeping the RF power, chamber pressure, DC bias and substrate temperature constant. Hour, the crystallinity of the film increased more than that of Xc, indicating that the lower SC favored the formation of crystalline components in the film structure. When SC decreased to 0.5%, the maximum value of Xc was 54.2%. The mechanical properties of the samples with different film crystalline ratios were measured by the TriboIndenter nano-indentation system of Hysitron Corp. The Young's modulus and hardness value of the films were obtained by the analytical method of Oliver and Pharr.The results show that when the Xc From 50.5% to 54.2%, the Young's modulus and hardness of the films both increase greatly. This phenomenon is caused by the fact that the films with different Xc have different crystalline microstructures, so the Xc values of the films are very large To a degree Mechanical properties of the films.