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现今已步入第四十二个年头的国际固体电路年会(ISSCC)向人们展示了世界范围内实验室IC设计的最高水平,而且这些设计最终将成为上市的产品.这次会议于2月15日至17日在美国加州旧金山召开,展示了多种多样的数字IC、模拟IC和通信IC的开发成果.《Electronic Design》对这次会议的报道一开始由半导体编辑Dave Bursky评述主要的数字技术的发展.他探讨了首批Gb级DRAM、高速SRAM、三维图形、非易失与铁电体存储器和存储器宏结构的细节.同时,他还仔细研究了降低存储器功率的方法.其他数字技术的发展有最新的64位RISC与CISC CPU、DSP IC、乘法器、线路驱动器、时钟缓存、FP- GA及多媒体IC.
The 44th International Solid-State Circuits Conference (ISSCC), which is now in its 42nd year, shows people the highest level of IC design in the world of labs that will eventually become commercially available products. 15 to 17 in San Francisco, California, USA, showing a wide variety of digital IC, analog IC and communications IC development results. “Electronic Design” report on the meeting was initially reviewed by the semiconductor editor Dave Bursky major figures He explored the details of the first Gb-class DRAMs, high-speed SRAMs, 3D graphics, non-volatile and ferroelectric memory and memory macrostructures, and he also carefully studied ways to reduce memory power.Other digital technologies Development of the latest 64-bit RISC and CISC CPUs, DSP ICs, multipliers, line drivers, clock buffers, FP-GA and multimedia ICs.