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场效应晶体管的历史是很早的,从人们经常引用的文章可以追溯到1928年 Lilien-feld 的专利。1952年肖克莱提出了结型栅场效应管的理论,但因很多人集中全力进行了双极晶体管的研制,所以它并没有得到显著的进展。到1960年,MOS 场效应管诞生了,它才代替了双极晶体管成为当时研制的主要目标。研究内容有针对二氧化硅中离子的运动所引起的不稳定现象和硅-二氧化硅界面上的能级,进行了物理学研究,为了减少它们的影响而进行了不少工艺性的研究。
The history of field-effect transistors is very early, and articles often quoted from people date back to the 1928 Lilien-feld patent. In 1952, Shockley proposed the theory of junction gate FETs, but no significant progress has been made since many people focused their efforts on the development of bipolar transistors. By 1960, MOS FET was born, it replaced the bipolar transistor became the main goal of the development. The research carried out physical studies on the instability caused by the movement of ions in silicon dioxide and the energy levels at the silicon-silicon dioxide interface, and carried out a lot of technological studies in order to reduce their influence.