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本文扼要叙述了扩展电阻分析用以测量较低浓度砷的剖面的有效性,进而研究了较低浓度砷在硅中的扩散问题.由于通过快速热退火对样品进行预处理,排除了辐照损伤对扩散系数测定的影响,从而测得砷在硅中本来意义下,即替位扩散意义下的本征扩散系数.如所预期,这组数据比国外直至目前所测得的数据要低.浓度剖面的实验数据由非线性扩散方程的数值解进行拟合.结果表明:SUPREM III所采用的模型在较高浓度区扩散系数随浓度递增速率较小,Hu理论仍然和本实验(?)较符合.本文还求得了扣除辐照损伤增强扩散效应后,砷在硅中的激活能为4.42eV
This article briefly describes the effectiveness of extended resistance analysis to measure cross-sections of arsenic at lower concentrations, and then studies the diffusion of lower concentrations of arsenic in silicon due to the radiation damage being ruled out by pretreatment of samples by rapid thermal annealing On the determination of the diffusion coefficient, thus measuring the inherent meaning of arsenic in silicon, that is, the intrinsic diffusion coefficient in the sense of substitution diffusion, as expected, this set of data is lower than the data measured up to now abroad. The experimental data of the section are fitted by the numerical solution of the nonlinear diffusion equation. The results show that the diffusion coefficient of the model adopted by SUPREM III is smaller with the increasing rate of concentration, and the Hu theory is still more consistent with the experimental In addition, we deduced that the activation energy of arsenic in silicon is 4.42eV after subtracting the enhanced diffusion effect of radiation damage,