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基于能量守恒原理推导出非线性GaAs光电导开关电路的差分公式,代入实验数据计算出开关的瞬态电压、电阻、功率.该方法解决了长期以来非线性GaAs光电导开关的瞬态特性难于测量的问题.通过GaAs光电导开关的瞬态电压曲线知,在锁定期间开关平均电场强度总是大于耿氏阈值,并随时间单调递增.通过对比开关与其电路电源的瞬态功率曲线,证明了电源功率不足是导致GaAs光电导开关从锁定状态进入自关断状态的根本原因,因此提出了在锁定期间通过改变电路的功率分布使开关可控关断的思想.
Based on the principle of energy conservation, the differential equation of nonlinear GaAs photoconductive switch circuit is deduced, and the transient voltage, resistance and power of the switch are calculated by substituting the experimental data.This method solves the problem that the transient characteristics of the nonlinear GaAs photoconductive switch have been difficult to measure .The transient voltage curve of GaAs photoconductive switch shows that the average electric field intensity of the switch is always greater than the Gunn threshold during the lock-in period and monotonically increases with time.Through comparing the transient power curve between the switch and its circuit power, it is proved that the power supply Insufficient power is the root cause of the GaAs photoconductive switch from the locked state to the self-off state. Therefore, the idea of controllably switching off the switch by changing the power distribution of the circuit during the lock-in period is proposed.