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半极性GaN材料的研究在光电器件和电子器件领域有重要意义。采用选区外延生长技术在Si衬底上生长半极性GaN材料,并制备肖特基势垒二极管(SBD)。通过测量SBD在不同温度下的I-V特性曲线,观察到电流的大小随着温度的增加而增加,且受反向偏压影响,证明半极性GaN基SBD的电流传输机制为热电子场发射模型。光致发光光谱和X射线光电子能谱测试进一步表明,相比极性c面GaN材料,半极性GaN材料表面存在较高的氧杂质原子浓度和氮空位,此为半极性GaN肖特基特性偏离热电子发射模型的主要因素。
The research of semipolar GaN materials is of great significance in the fields of optoelectronic devices and electronic devices. A semi-polar GaN material is grown on a Si substrate using a selective epitaxial growth technique and a Schottky barrier diode (SBD) is fabricated. By measuring the IV characteristics of SBD at different temperatures, it is observed that the current increases with the increase of temperature and is affected by the reverse bias voltage. It is proved that the current transfer mechanism of semipolar GaN-based SBDs is the thermionic field emission model . Photoluminescence spectra and X-ray photoelectron spectroscopy tests further show that the surface of semipolar GaN material has higher oxygen impurity atomic concentration and nitrogen vacancy than polar c-plane GaN material, which is a semipolar GaN Schottky The main characteristic of the deviation from the hot electron emission model.