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In2O3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400°C~450°C using InSb as the precursor via VLS mechanism.The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction as established by high resolution electron microscopy.The electronic and local structures of In2O3 nanowires,compared to that of In2O3 powder,have been studied with X-ray absorption fine structure (XAFS) at In K-edge and O K-edge.The XAFS results reveal the stronger In-O bonding in 1n2O3 nanowires compared to bulk In2O3.