论文部分内容阅读
利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的掺锰氧化锌(ZnO∶Mn)透明导电薄膜。实验制备的ZnO∶Mn为六方纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO∶Mn薄膜的生长速率、残余应力及电学性能有很大影响,而对薄膜的晶粒尺寸和光学性能影响不大。考虑薄膜的电学、光学及力学性能,认为靶与衬底之间的最佳距离为7.0 cm。在此条件下制备的ZnO∶Mn薄膜的电阻率达到4.2×10-4Ω.cm,可见光透过率为86.6%,而残余应力仅为-0.025 GPa。
The ZnO doped ZnO (Mn: ZnO) transparent conductive thin films with high visible light transmittance and low resistivity were prepared by DC magnetron sputtering on glass substrates at room temperature. The experimentally prepared ZnO: Mn is a polycrystalline thin film with hexagonal wurtzite structure and has a preferred c-axis orientation perpendicular to the substrate. The experimental results show that the distance between the target and the substrate greatly affects the growth rate, residual stress and electrical properties of the ZnO: Mn films, but has little effect on the grain size and optical properties of the films. Considering the electrical, optical and mechanical properties of the film, the optimal distance between the target and the substrate is considered to be 7.0 cm. The ZnO: Mn films prepared under these conditions have a resistivity of 4.2 × 10-4 Ω · cm, a visible light transmittance of 86.6% and a residual stress of -0.025 GPa.