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近年来,由Ge,Si这两种晶格失配(4.2％)材料组成的Ge/Si异质结构与Ge/Si应变超晶格,由于共具有重要的科学与技术价值,受到了人们高度重视。分子束外延(MBE)技术已成功地用于生长Ge/Si异质结构和超薄Ge/Si超晶格以及GexSi1-x/Si超晶格。化学汽相淀积技术(CVD)与MBE相比,除了设备简单、价格便宜外,对于Ge,Si外延来说,还便于与现有的硅大规模集成工艺技术相结合,使之更富有实用性。近期已有报道用CVD技术生长GexSi1-x/Si异质结构。
In recent years, the Ge / Si heterostructures and Ge / Si strained superlattices composed of Ge and Si lattice mismatches (4.2%) have been highly praised by people for their high scientific and technical value Pay attention. Molecular Beam Epitaxy (MBE) technology has been successfully used to grow Ge / Si heterostructures and ultrathin Ge / Si superlattices as well as GexSi1-x / Si superlattices. Compared with MBE, chemical vapor deposition (CVD), in addition to simple equipment and low cost, facilitates the integration with the existing large-scale silicon integration technology for Ge and Si epitaxy, making it more practical and practical Sex. Recently, it has been reported that GexSi1-x / Si heterostructures are grown by CVD.