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报道了用半导体材料 Ga As实现氙灯抽运 Nd:YAG激光器的被动调 Q运转 ,测量了激光器的阈值、脉冲宽度和输出能量。从 Ga As的能级结构出发 ,理论上研究了 Ga As材料的饱和吸收原理 ,建立了调 Q激光器速率方程并给出了数值解 ,对理论结果与实验结果进行了比较和讨论。
A passive Q-switched Nd: YAG laser with a GaAs semiconductor material GaAs was reported. The threshold, pulse width and output power of the laser were measured. Based on the energy level structure of GaAs, the theory of saturation absorption of GaAs material is theoretically studied, the rate equation of Q-switched laser is established and the numerical solution is given. The theoretical and experimental results are compared and discussed.