对Al-Al_2O_3-ZnS:Cu,Er,Cl-SnO_2直流薄膜电致发光(DCTEL)器件作了光电特性测量。发现被测器件的C-V特性类似于MIS结的特性。分析正向偏置器件产生电致发光,I-V、B-V关系,发光延迟与衰减及E_r~(3+)特征发射谱等实验结果,初步认为;在所研究的EL器件中,对应于E_r~(3+)特征谱线的发光中心不属于直接碰撞激发,而是敏化发光;Cu可能主要起着敏化剂的作用。 The photoelectric properties of Al-Al_2O_3-ZnS: Cu, Er, Cl-SnO_2 DC thin film electroluminescent (DCTEL) devices were measured. The C-V characteristics of the device under test were found to be similar to those of the MIS junction. The experimental results of the electroluminescence, IV, BV, emission delay and attenuation, and E_r ~ (3+) emission spectra of the forward-biased devices are analyzed preliminarily. In the EL devices studied, corresponding to E_r ~ 3+) luminescence centers of the characteristic lines do not belong to the direct collision excitation, but sensitized the luminescence; Cu may mainly play the role of sensitizer.