硅栅工艺为完成场效应晶体管的大规模集成矩阵提供了方便的途径。它的优点(主要由于低阈值电压和掩埋在绝缘体内的自对准栅结构)是容易与双极型电路耦合並能提高二者的性能和功能元件密度,使MOS集成电路更好用、更价廉。本文评述最近采用这一工艺的进展情况,並用一存储器电路为例来说明构成复杂数字功能电路的应用。 The silicon gate process provides a convenient way to complete a large-scale integrated matrix of field effect transistors. Its advantages, mainly due to the low threshold voltage and self-aligned gate structure buried in the insulator, are easy to couple with bipolar circuits and improve the performance and functional element density of both, making MOS integrated circuits easier to use and more Cheap. This article reviews recent advances in this process and uses a memory circuit as an example to illustrate the applications that make up complex digital functional circuits.