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介绍了采用全剂量SI MOX SOI材料制备的0·8μmSOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5μA.
The anti-total dose radiation characteristics of a 0.8 μm SOI CMOS device made with a full dose of SI MOX SOI material are described using the threshold voltage of the device, the leakage current, and the quiescent current of the ASIC with a total dose of up to 500 krad (Si) The experimental results show that the maximum threshold voltage shift of pMOS device is less than 320mV after the 1Mrad (Si) radiation at the off state, and the maximum threshold voltage shift of nMOS device after the 1Mrad (Si) radiation is less than 120mV at the on state. (Si) radiation, no significant leakage was observed. The quiescent current of ASICs was less than 5μA at a total dose of 500krad (Si).