阐述了一种结构特别的硅扩展电阻式元件的温度敏感原理，提出了物理模型，探讨了其工作温区拓宽机理。对器件的结构尺寸、材料、工艺参数对阻温特性的影响进行了计算机模拟分析及实验研究。理论分析和实验结果表明：传感器在０～３００℃范围内具有正温度系数（ＰＴＣ）特性，其胆温系数为０．７３％／℃要拓宽硅扩展电阻（ＳＲＴ）传感器ＰＴＣ特性区的工作温度范围，必须尽可能减少扩散接触区的体积和晶体的体积，尽可能提高硅晶体掺杂浓度和晶体中载流子寿命，并适当提高正向工作电流。 A temperature-sensitive principle of a silicon-extended resistive element with a special structure is described. A physical model is proposed and the broadening mechanism of its working temperature zone is discussed. The influence of structure size, material and process parameters on the temperature-resisting property of the device was simulated and analyzed by computer. The theoretical analysis and experimental results show that the sensor has positive temperature coefficient (PTC) within the range of 0-300 ℃ and its temperature coefficient of glow is 0.73% / ℃. To widen the working temperature range of the PTC characteristic region of silicon extended resistance (SRT) sensor, Range, we must minimize the size of the diffusion contact area and the volume of the crystal, as much as possible to improve the silicon crystal doping concentration and carrier lifetime in the crystal, and properly increase the forward current.