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利用从金属蒸汽真空弧 (简称 MEVVA)离子源引出的强束流脉冲钼离子对纯铝进行了不同束流密度的离子注入试验。钼离子的加速电压为 4 8k V,剂量为 3× 10 1 7cm- 2 ,平均束流密度为 2 5和 4 7μA· cm- 2 。透射电镜 (TEM)分析证明在注入层内可形成 Al1 2 Mo晶体 ;背散射 (RBS)分析证明 Al1 2 Mo的厚度可达 6 0 0至70 0 nm;结合强束流脉冲注入的特点 ,根据碰撞理论提出了解释钼反常分布的“蜂窝”模型。
Pure ion beam implantation experiments with different beam densities were carried out by using strong pulsed pulsed molybdenum ions derived from a metal vapor vacuum arc (MEVVA) source. The accelerating voltage of molybdenum ions is 48 kV, the dose is 3 × 10 17 cm -2, and the average beam current density is 25 and 47 μA · cm -2. Transmission electron microscopy (TEM) analysis shows that Al1 2 Mo crystals can be formed in the implanted layer. Back-scattering (RBS) analysis shows that the thickness of Al1 2 Mo can reach 600-700 nm. Combining with the characteristics of pulsed beam injection, Collision theory proposes a “honeycomb” model that explains the anomalous distribution of molybdenum.