一、前言为将磁敏感结构作为硅传统集成电路的一部分集成起来,发展了一种集成电路。它们一般用作位置传感器(如用在键盘、机床电机上等),磁电极,交流/直流电流传感器等。第一个磁敏MOS器件是由Gallagher和Corak发明的MOS霍尔元件。这种器件可以获得10~3V/AT的灵敏度。由Fry和Hoey设计的一种对漏MOS晶体管电路可 I. INTRODUCTION In order to integrate a magnetically sensitive structure as part of a traditional silicon integrated circuit, an integrated circuit has been developed. They are generally used as position sensors (such as used in keyboards, machine tools, etc.), magnetic electrodes, AC / DC current sensors, and the like. The first magneto-sensitive MOS device is a MOS Hall element invented by Gallagher and Corak. This device can be 10 ~ 3V / AT sensitivity. A pair of drain MOS transistor circuits designed by Fry and Hoey are available