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本文评论了注入离子横向分布这一课题的最近研究成果,为了知道三维离子的分布,先论述了理论方法。考虑到分布范围的四次项,讨论了横向扩展最大时横向分布的形状和深度。其次给出检验理论预言的实验方法,并且把实验数据和理论数据作了比较。最后作为一个实际例子,用实验结果讨论了砷化镓绝缘层中质子的横向扩展。最终的结果是,对于制作微米尺寸的器件来说,注入离子和绝缘层中质子的横向扩展是不容忽视的。
This paper reviews recent research results on the problem of lateral distribution of implanted ions. In order to know the distribution of three-dimensional ions, the theoretical method is first discussed. Considering the fourth term of the distribution range, we discuss the shape and depth of the horizontal distribution when the horizontal expansion is maximum. Second, the experimental method of testing theoretical predictions is given, and the experimental data and theoretical data are compared. Finally, as a practical example, the experimental results discuss the lateral expansion of protons in GaAs insulation layers. The net result is that the lateral expansion of the protons in the implanted ions and in the insulating layer can not be ignored for making micron-sized devices.