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在Ge或Si和杂质元素组成的二元系中,及Au-Bi,Au-Tl,Ag-Bi,Ag-Pb,Ag-Tl(后一元素表示杂质)中,发现杂质元素分布系数K_B的对数和液相线上组分A的开方浓度。x_(A,L)~(1/2)间有直线关系。据此外推求得的Ge或Si(IV族)中熔点下分布系数K_B~o和实验结果相当符合,也求得了Au,Ag,Cu(Ⅰ族),Mg(Ⅱ族),Al(Ⅲ族)中某些杂质的K_B~o。在这些系统中,发现如Fischler在Ge或Si中所指出的那样,K_B~o和杂质元素的最大固溶度之间也有简单的经验关系。
In the binary system composed of Ge or Si and an impurity element, and Au-Bi, Au-Tl, Ag-Bi, Ag-Pb and Ag-Tl (the latter element represents an impurity), it is found that the impurity element distribution coefficient K_B The logarithmic and open-cell concentration of component A on the liquidus. There is a linear relation between x_ (A, L) ~ (1/2). According to the extrapolation, the distribution coefficient K_B ~ o under the melting point in Ge or Si (IV) is in good agreement with the experimental results, and the Au, Ag, Cu (Group I), Mg In some of the impurities K_B ~ o. In these systems, it is found that there is also a simple empirical relationship between K_B ~ o and the maximum solubility of the impurity element, as pointed out by Fischler in Ge or Si.