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介绍了Si1-xGex合金材料在制作新型光电子器件方面的重要作用,描述了应变SiGe层的特性,包括其临界厚度与Ge组分的关系、能带变窄、折射率增加,以及应变SiGe层的亚稳态特性。设计了应变锗硅缓冲层上的高Ge组分PIN光电探测器的外延材料和结构,采用Silvaco软件分别对光电探测器的器件结构、光谱响应、响应电流及其随入射光功率的变化、器件的暗电流进行了模拟,结果显示,探测器有源区面积增大,其响应电流也增大,且暗电流比其响应电流小6～8个数量级;探测器的响应时间约为3.8×10-9s;探测器在850nm左右具有较好的光响应;这些结果都比较理想。采用L-edit软件设计了该光电探测器的结构,最后对研究结果做出总结。
The important role of Si1-xGex alloy in the fabrication of new optoelectronic devices is introduced. The properties of strained SiGe layers are described, including the relationship between critical thickness and Ge composition, narrowing of band gap, increasing of refractive index, Metastable characteristics. The epitaxial material and structure of high-pin PIN photodetector on strained SiGe buffer layer were designed. The device structure, spectral response, response current and incident light power of the photodetector were respectively analyzed by Silvaco software. The simulation results show that the active area of the detector increases and its response current also increases, and the dark current is 6 to 8 orders of magnitude smaller than the response current. The response time of the detector is about 3.8 × 10 -9s; detector at 850nm has a good light response; these results are more ideal. The structure of this photodetector was designed by using L-edit software, and finally the research results were summarized.