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Hg_(1-xCdxTe)光电二极管技术的最近进展是提高了整个1～20微米光谱段高温的探测器灵敏度。对1～3微米辐射灵敏的短波长光电二极管,室温蜂值探测率是在4×10~(11)和8 × 10~8厘米赫1/2/瓦之间,视峰值波长而定。对3～5微米辐射灵敏的中等波长光电二极管,在193K和130K温度下的峰值探测率分别为1×10~(11)和1 ×10~(12)厘米赫1/2/瓦。对12微米辐射灵敏的长波长光电二极管,其峰值探测率在65K时为5×10~(10)厘米赫1/2/瓦,在10K时为5×10(11) 厘米赫1/2/瓦。
Recent advances in Hg_ (1-x CdxTe) photodiode technology have been to increase detector sensitivity over the entire 1 to 20 micron spectral range. For 1 to 3 μm radiation sensitive short wavelength photodiodes, the detection rate at room temperature is between 4 × 10 11 and 8 × 10 8 cm 1/2 / watts, depending on the peak wavelength. For 3-5 μm radiation-sensitive medium wavelength photodiodes, the peak detection rates at 193K and 130K are 1 × 10-11 and 1 × 10-12 cm 2 / watt, respectively. Long-wavelength photodiodes sensitive to 12 μm radiation have a peak detection rate of 5 × 10 ~ (10) cm 2 / watt at 65K and 5 × 10 (11) cm @ 1/2 / watt.