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通过测量ＧｅＳｉ多量子阱的红外谱，同时观察到了相应于量子阱内重空穴基态ＨＨ０到重空穴激发态ＨＨ１、轻空穴激发态ＬＨ１和自旋分裂带ＳＯ及连续态间的跃迁吸收．测量了ＧｅＳｉ多量子阱探测器的正入射光电流谱，看到了明显的光响应峰．理论计算中计及了轻、重和自旋分裂带间的耦合及能带的非抛物性，并自洽考虑了哈特里势和交换相关势．与实验结果比较，认为带之间的耦合，使子带间的跃迁情况变得复杂，是正入射吸收产生的原因
By measuring the infrared spectra of GeSi multi-quantum wells, we also observed the transition absorption between HH0 and HH1, light-hole excited state LH1 and spin-splitting zone SO and continuous states corresponding to the heavy hole in the quantum well . The normal incident light current spectrum of GeSi multiple quantum well detector was measured and a clear peak of photoresponse was observed. The theoretical calculations take into account the coupling between the light, heavy and spin-splitting bands and the non-parabolic nature of the band, and consider the Hartley potential and the exchange-correlations in a consistent way. Compared with the experimental results, it is considered that the coupling between the bands complicates the transition between the subbands and is the cause of the normal incident absorption