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建立了氮化镓(Ga N)薄膜和氧化铝(Al2O3)衬底三维有限元模型模拟因两种材料热膨胀系数不同导致的温度应力和变形。进行了不同沉积温度、Ga N薄膜厚度、Al2O3衬底厚度和直径下的薄膜热应力和变形模拟正交实验。定量分析了各因素对薄膜热应力和边缘变形的影响,确定了使薄膜热应力和边缘变形最小的最佳因素水平组合。薄膜应力理论和数值解相差小于1.4%,建立的有限元模型可以用于薄膜应力和变形的分析。影响Ga N薄膜热应力的因素次序为沉积温度、Ga N薄膜厚度、Al2O3衬底厚度、衬底直径,最佳因素水平组合为A1B3C3D1。影响Ga N薄膜边缘变形的因素次序为Al2O3衬底直径、Ga N薄膜厚度、Al2O3衬底厚度、沉积温度,最佳因素水平组合为A1B3C1D3。
A three-dimensional finite element model of gallium nitride (GaN) thin film and aluminum oxide (Al2O3) substrate was established to simulate the temperature stress and deformation due to the different thermal expansion coefficients of the two materials. The simulation experiments of thermal stress and deformation under different deposition temperatures, GaN film thickness, Al2O3 substrate thickness and diameter were carried out. The influences of various factors on the thermal stress and edge deformation of the film were quantitatively analyzed, and the optimum combination of factors for minimizing the thermal stress and edge deformation of the film was determined. The difference between the theoretical stress and the numerical solution is less than 1.4%. The established finite element model can be used to analyze the stress and deformation of the film. The order of the factors affecting the thermal stress of GaN thin film is the deposition temperature, the thickness of GaN film, the thickness of Al2O3 substrate and the substrate diameter. The optimal combination of factors is A1B3C3D1. The order of the factors influencing the edge deformation of GaN thin film is Al2O3 substrate diameter, GaN film thickness, Al2O3 substrate thickness and deposition temperature. The optimal combination of factors is A1B3C1D3.