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提出了一种新颖的低导通电阻600V器件结构。该结构采用了掺杂深槽和分裂浮空埋层结构,可以克服普通分裂浮空埋层结构划片道边缘漏电大的问题,同时仍然保持了普通分裂浮空埋层结构具有的较低导通电阻的优势。数值仿真表明,采用这种结构的600V器件外延层比导通电阻在相同耐压下比理想平行平面结结构小43%,从73.3mΩ·cm2降低到41.7mΩ·cm2。
A novel low on-resistance 600V device structure is proposed. The structure adopts the structure of doped deep trenches and split floating buried structures to overcome the problem of large electric leakage at the edges of the dicing lamella of common split floating structures while still maintaining the lower conduction of common split floating buried structures Resistance advantages. The numerical simulation shows that the epitaxial layer of 600V device with this kind of structure is 43% lower than the ideal parallel plane junction structure in terms of on-resistance at the same withstand voltage, from 73.3mΩ · cm2 to 41.7mΩ · cm2.