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20世纪90年代随着材料制造技术的发展,第3代半导体材料碳化硅(SiC)技术取得突破性进展,成为制造核辐射探测器极有吸引力的化合物半导体材料(即宽带隙半导体材料)。SiC探测器具有可在高温下工作、漏电流小、信噪比好等优点。SiC探测器最突出优点是表现出很好的抗辐照性能,因此特别适合于高温高压以及强辐射极端环境下进行放射性测量。通过国外进口购买了N型4H-SiC外延片,外延层掺杂浓度6×1015~7×1015 cm-3,外延层厚度20μm。完成探测器结构设计,进行了工艺步骤设计。图1为探测器结构截面图。
In the 1990s, with the development of material manufacturing technology, the third generation of silicon carbide (SiC) semiconductor material made a breakthrough and became an extremely attractive compound semiconductor material for manufacturing nuclear radiation detectors (ie, a wide bandgap semiconductor material). SiC detector can work at high temperatures, small leakage current, good signal to noise ratio and so on. The most prominent advantage of SiC detectors is that they exhibit good resistance to radiation and are therefore particularly suitable for radiometric measurements at high temperatures and pressures as well as in extreme radiation environments. The N-type 4H-SiC epitaxial wafer was purchased through foreign imports. The doping concentration of the epitaxial layer was 6 × 1015 ~ 7 × 1015 cm-3 and the epitaxial layer thickness was 20μm. Complete detector structure design, process design steps. Figure 1 is a cross-sectional view of the detector structure.