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离子注入是一种物理摻杂方法,在半导体器件的制备中已得到广泛的应用,它与常规的化学、电化学或热扩散掺杂相比具有一些特点:可以通过质量分析器选取单一的注入离子,故掺杂杂质的纯度高;根据注入离子的剂量和能量,精确控制到掺人杂质的数量和深度等等。近年来,采用离子注入技术进行掺杂,改变聚合物或其它绝缘材料表面性质的研究已逐步引起重视真视。
Ion implantation is a physical doping method that has found wide application in the fabrication of semiconductor devices and has several characteristics over conventional chemical, electrochemical or thermal diffusion doping: A single implant can be selected by a mass analyzer Ions, so the purity of doped impurities is high; according to the dose and energy ion implantation, precise control of the amount and depth of doped impurities and so on. In recent years, the use of ion implantation techniques for doping, polymer or other insulating materials to change the surface properties of the study has gradually attracted attention.