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本文是对硅的热氧化动力学理论的发展。现有的硅热氧化动力学理论不能同时描述任意厚度氧化层的生长规律、外加电场对氧化速率的影响和氧化速率与氧分压的依赖关系。本文在考虑氧化层中空间电荷的影响以及离化氧分子O_2~-和离化氧原子O~-同时参与与Si—Si键反应的基础上,提出了一个更为普遍的氧化动力学模型,它可克服现有理论的不足。文中给出了理论与实验结果的比较,并讨论了本动力学模型与其它动力学模型的关系。
This article is the development of the theory of thermal oxidation of silicon. The current theory of thermal oxidation of silicon can not simultaneously describe the growth law of any thickness of the oxide layer, the impact of applied electric field on the oxidation rate and the dependence of the oxidation rate and oxygen partial pressure. In this paper, a more general oxidation kinetic model is proposed based on the consideration of the space charge in the oxide layer and the simultaneous reaction of O 2 ~ - and O ~ O with Si-Si bond. It can overcome the deficiencies of the existing theory. The paper gives the comparison of the theoretical and experimental results, and discusses the relationship between the dynamic model and other dynamic models.