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采用化学气相沉积技术(CVD)在铜箔衬底上实现了石墨烯单晶畴的可控生长,并用两步生长法制备了不同单晶畴尺寸的多晶石墨烯连续膜。利用光学显微镜和拉曼光谱仪对石墨烯的形貌和结构进行了表征。通过对转移到SiO2衬底上石墨烯连续膜的霍尔测试发现,石墨烯晶畴尺寸变化对其连续膜的电学性能影响显著。石墨烯连续膜的晶畴尺寸越大,其方块电阻越小,载流子迁移率越高。
The controlled growth of graphene single crystal domains on the copper foil substrate was achieved by chemical vapor deposition (CVD), and the polycrystalline graphene films with different single crystal domain sizes were prepared by two-step growth method. The morphology and structure of graphene were characterized by optical microscopy and Raman spectroscopy. Through the Hall test on the continuous graphene film transferred to the SiO2 substrate, it is found that the change of the graphene crystal size has a significant effect on the electrical properties of the continuous film. The larger the domain size of graphene continuous films, the smaller the sheet resistance, the higher the carrier mobility.