据《Simeconductor FPD World》2009年第2期报道,东芝公司、IBM和先进微器件公司(AMD)联手开发基于片式立体结构场效应晶体管(Fin FET)超小型SRAM单元。SRAM单元的面积仅为0.128μm2。作为下一代晶体管的FinFET采用了高介电率栅绝缘膜和金属栅技术。SRAM单元的缩小而实现了芯片 According to Simeconductor FPD World, Issue 2, 2009, Toshiba, IBM and Advanced Micro Devices (AMD) have teamed up to develop ultra-small SRAM cells based on FinFETs. The area of ​​SRAM cell is only 0.128μm2. FinFETs as the next generation of transistors use high dielectric gate insulator and metal gate technology. SRAM cells shrink to achieve the chip