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基于Mie理论和热传导方程,结合ICP-OES对熔石英亚表面杂质粒子的主要成分测量,建立了计算吸收性杂质粒子诱导熔石英光学元件表面损伤概率的模型。通过该模型理论研究了不同种类的杂质粒子诱导损伤所需的临界能量密度随粒子尺寸的变化,以及不同尺寸分布的杂质粒子诱导熔石英表面的损伤概率。通过损伤实验测试获得了不同光斑尺寸的355 nm激光辐照作用下熔石英表面的损伤概率,与理论计算结果进行对比,在相同粒子分布参数下,分析了三种杂质粒子对损伤概率的贡献(Cu>Al>CeO_2)。通过该模型能够分析光学基底或薄膜亚表面中不同潜在的杂质吸收性粒子对光学元件损伤概率的影响。
Based on the Mie theory and the heat conduction equation, combined with the ICP-OES measurement of the major components of fused silica subsurface impurity particles, a model for calculating the probability of surface damage induced by absorbing impurity particles was established. The model theory is used to study the critical energy density required for different kinds of impurity particles to induce damage, and the probability of damage on the surface of fused silica induced by impurity particles with different size distributions. The damage probability of the fused silica surface with 355 nm laser irradiation with different spot sizes was obtained by the damage experiment. Compared with the theoretical calculation results, the contribution of the three kinds of impurity particles to the damage probability was analyzed under the same particle distribution parameters ( Cu> Al> CeO 2). The model can be used to analyze the influence of different potential impurity-absorbing particles on the optical element or the sub-surface of the film on the damage probability of optical elements.