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应用自制的红外光弹装置,研究了直拉单晶和区熔单晶的应力分布。发现硅单晶中应力分布与位错及微缺陷有良好的对应关系。并发现硅单晶中的凝固应力并不因机械冷加工而有明显的释放。
The self-made infrared photoelastic device was used to study the stress distribution of Czochralski (Czochralski) single crystal and zone single crystal. It is found that there is a good correspondence between stress distribution in silicon single crystal and dislocation and microdefects. And found that the solidification stress in the silicon single crystal is not obviously released due to the mechanical cold working.