研究了不同颗粒尺寸的纳米ＧｅＳｉＯ２镶嵌薄膜的室温荧光光谱以及不同激发光能量对荧光峰的影响．实验结果表明，沉积态ＧｅＳｉＯ２薄膜样品在可见光区域不发光．退火后的样品（平均锗颗粒尺寸为３２—６０ｎｍ）在３８０—５２０ｎｍ波长范围内有明显的蓝光发射现象．当用λ＝３００ｎｍ的光激发，观测到中心波长为４２０ｎｍ（２９５ｅＶ）的光致荧光峰；而用６３３ｎｍ波长的光激发，谱图上出现中心波长分别为４２０和４７０ｎｍ的两个荧光峰．随着纳米锗颗粒尺寸的增加，光致荧光峰的相对强度逐渐降低，但峰位不随颗粒尺寸发生明显的改变．对纳米锗颗粒镶嵌ＳｉＯ２复合薄膜样品在室温下可见光区光致荧光的产生机理进行了初步探讨 The room temperature fluorescence spectra of nanostructured GeSiO2 thin films with different particle sizes and the influence of different excitation light energies on the fluorescence peak were studied. The experimental results show that the deposited GeSiO2 film does not emit light in the visible region. The annealed sample (average germanium particle size of 3  2-6  0 nm) in the 380-520nm wavelength range obvious blue emission phenomenon. When excited by light at λ = 300nm, a photoluminescence peak centered at 420nm (2.95eV) was observed. When excited at 633nm, two fluorescence peaks centered at 420 and 470nm appeared on the spectrum, respectively . With the increase of the size of nano-germanium particles, the relative intensity of the photoluminescence peak gradually decreases, but the peak position does not change obviously with the particle size. The mechanism of photoluminescence in the visible region of nano-germanium particles embedded in SiO2 composite film samples at room temperature was discussed