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利用射频磁控溅射法在玻璃基片上制备了Cu2ZnSnS4(CZTS)薄膜,薄膜在室温下生长,再在Ar气氛中快速退火。通过X射线衍射、X射线电子能谱、原子力显微镜和吸收谱研究了退火温度对薄膜结构、组分、形貌和禁带宽度的影响。结果表明,所制备样品为Cu2ZnSnS4多晶薄膜,具有较强的沿(112)晶面择优取向生长的特点,薄膜组分均为富S贫Cu,样品表面形貌比较均匀。退火温度为350,400,450和500℃的薄膜样品的禁带宽度分别是1.49,1.53,1.51和1.46 eV。
Cu2ZnSnS4 (CZTS) films were prepared on glass substrate by RF magnetron sputtering. The films were grown at room temperature and then annealed rapidly in Ar atmosphere. The effects of annealing temperature on the structure, composition, morphology and band gap of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and absorption spectra. The results show that the prepared samples are Cu2ZnSnS4 polycrystalline thin films with strong preferential growth along the (112) plane. The thin films are all enriched in S and depleted in Cu. The surface morphology of the samples is relatively uniform. The forbidden band widths of thin film samples with annealing temperatures of 350, 400, 450 and 500 ° C were 1.49, 1.53, 1.51 and 1.46 eV, respectively.