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利用sol-gel法在Pt/Ti/SiO2/Si衬底上制备出Bi0.85Nd0.15FeO3薄膜.研究退火温度对其晶相形成的影响,发现在450℃退火时,Bi0.85Nd0.15FeO3晶相开始形成,但是结晶较差,而且存在杂相;在500—600℃退火可以获得单相Bi0.85Nd0.15FeO3薄膜,退火温度升高有利于其结晶.对600℃退火的Bi0.85Nd0.15FeO3薄膜的介电、铁电和电磁性能进行了测试.在测试频率为1MHz时,其介电常数和介电损耗分别为145,0.032;饱和磁化强度大约为44.8emu/cm3;剩余极化值(2Pr)大约是16.6μC/cm2.
The Bi0.85Nd0.15FeO3 thin film was prepared on Pt / Ti / SiO2 / Si substrate by sol-gel method.The effect of annealing temperature on the crystal phase formation was investigated and it was found that the Bi0.85Nd0.15FeO3 crystal phase The formation of single-phase Bi0.85Nd0.15FeO3 thin films can be obtained by annealing at 500-600 ℃, and the increase of annealing temperature is beneficial to the crystallization.For 600 ℃ annealed Bi0.85Nd0.15FeO3 thin films The dielectric constant, ferroelectric and electromagnetic properties were tested at a test frequency of 1MHz, the dielectric constant and dielectric loss were 145,0.032, respectively, and the saturation magnetization was about 44.8emu / cm3. The remanent polarization (2Pr ) Is about 16.6 C / cm2.