论文部分内容阅读
本文完成了热载流子诱生MOSFET/SOI界面陷阱正向栅控二极管技术表征的实验研究 .正向栅控二极管技术简单、准确 ,可以直接测得热载流子诱生的平均界面陷阱密度 ,从而表征器件的抗热载流子特性 .实验结果表明 :通过体接触方式测得的MOSFET/SOI栅控二极管R G电流峰可以直接给出诱生的界面陷阱密度 .抽取出来的热载流子诱生界面陷阱密度与累积应力时间呈幂指数关系 ,指数因子约为 0 787
In this paper, experimental research on hot carriers induced MOSFET / SOI interface trap forward gated diode technology is completed.The forward gated diode technology is simple and accurate, and the average interface trap density induced by hot carrier can be directly measured , So as to characterize the hot carrier resistance of the device.The experimental results show that the density of interface traps induced by the MOSFET / SOI gated diode RG measured by the body-contact method can be directly given by the induced hot carrier Induced interface trap density and cumulative stress time showed a power exponential relationship with an exponential factor of about 0 787