论文部分内容阅读
The microfabrication and performance NiTi shape memory thin films for microdevice applications were studied by microfabrication processes, which were compatible with those of microelectronics fabrication processes. The sputter-deposition conditions, patterning process, and annealing conditions were investigated. The B2 crystal structures of the thin films can be obtained by annealing at 525°C for 30min. The results from x-ray photoemission spectroscopy indicated that the atomic concentration in the surface of the annealed thin films with preferred structures is comparable with those of the as-deposited films.
The microfabrication and performance NiTi shape memory thin films for microdevice applications were studied by microfabrication processes, which were compatible with those of microelectronics fabrication processes. The sputter-deposition conditions, patterning process, and annealing conditions were investigated. The B2 crystal structures of the thin Films can be obtained by annealing at 525 ° C for 30 min. The results from x-ray photoemission spectroscopy indicated that the atomic concentration in the surface of the annealed thin films with preferred structures is comparable with those of the as-deposited films.