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本文在对 p+ p p+ 结构薄膜全耗尽积累型 SOI MOS器件导电机理和基本特性研究的基础上 ,进一步研究了实验样品在 (2 7～ 30 0℃ )宽温区高温特性 ,理论和实验研究结果表明 p+ p p+ 结构薄膜全耗尽积累型 SOI MOS器件实验样品在 (2 7～ 30 0℃ )宽温区具有良好的高温特性
Based on the study of the conduction mechanism and basic characteristics of the fully depleted SOI MOS device with p + p p + structure, the high temperature characteristics of the experimental samples in the wide temperature range (27 ~ 30 0 ℃) are further studied. The theoretical and experimental studies The experimental results show that the experimental samples of fully depleted and accumulated SOI MOS devices with p + p p + structure have good high temperature characteristics in the wide temperature range of (27 ~ 30 0 ℃)