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在77K时的电子迁移率利用分凝作用是提高InSb纯度的关键办法。将经区熔提纯的晶绽中段切下来,在液氮温度下测量霍尔系数或零磁场下的电阻率,算出载流子浓度或迁移率,检定纯度。由于中段为n型晶体,所以,剩余杂质可以看作施主杂质。提拉单晶就集中在该部位生长。其时虽可望得到正常凝固条件下的分凝效果。但由于在操作过程中污染了可以看作受主杂质的杂质,其效果有限。换句话说,
The use of segregation at the electron mobility at 77K is the key to improving the purity of InSb. The mid-crystal melt cut by mid-melt cut section, measuring the Hall coefficient at zero temperature liquid nitrogen or the magnetic field resistivity, calculate the carrier concentration or mobility, test purity. Since the mid-n-type crystal, so the remaining impurities can be seen as donor impurities. Pull the single crystal to concentrate on the site growth. Although it is expected to get the normal coagulation conditions under the coagulation effect. However, its effectiveness is limited due to contamination of contaminants that may be considered as acceptor impurities during operation. in other words,