日本Toyoda Gosei公司研发总部的研究人员近日在《应用物理快讯》杂志上发表了研究报告,称最新研发出垂直取向的氮化镓基晶体管,其阻断电压超过1kV。这一研究进展对氮化物器件在汽车以及相关领域的应用十分重要。较低的电阻可减少功耗和发热,这一特性吸引了众多研究者将注意力放在氮化镓的纳米电子应用。而之前的研究主要集中在横向氮化镓和铝镓氮晶体 Researchers at Japan’s Toyoda Gosei R & D headquarters recently published a research report in the Applied Physics Letters magazine, claiming that the newly developed vertically-oriented gallium nitride based transistor with a blocking voltage in excess of 1 kV. The progress of this research is very important for the application of nitride devices in automotive and related fields. Lower resistance reduces power consumption and heat, a feature that has attracted the attention of many researchers in the nanoelectronic applications of gallium nitride. Previous studies have focused on lateral GaN and AlGaN crystals