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采用恒电流电化学沉积工艺制备Bi-Te二元薄膜。随着沉积时间的变化,在同一个电极上依次出现了单相的Bi_2Te_3和Bi_4Te_3薄膜。其中,Bi_2Te_3薄膜是由规则的长度为100 nm左右,平均宽度为10 nm的纳米棒组成,其具有非常大的比表面积,非常有利于其作为热电材料的应用。而Bi_4Te_3薄膜是由纳米颗粒团聚而成的不规则多面体组成。研究证明通过改变沉积参数,有可能在Bi-Te二元系统的沉积过程中对生成物的相组成和形貌进行调控。
Bi-Te binary films were prepared by galvanostatic deposition. With the change of deposition time, one-phase Bi_2Te_3 and Bi_4Te_3 thin films appeared on the same electrode. Among them, the Bi 2 Te 3 thin film is composed of regular nanorods with a length of about 100 nm and an average width of 10 nm, which has a very large specific surface area and is very favorable for application as a thermoelectric material. However, the Bi_4Te_3 thin film is composed of irregular polyhedrons formed by agglomeration of nanoparticles. Studies have shown that by changing the deposition parameters, it is possible to control the phase composition and morphology of the product during the deposition of the Bi-Te binary system.