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微电子技术的瓶颈和信息技术发展的需求加速了光电子学在硅基材料上实现光信息处理、光电子集成的研究,利用硅基材料制造出高质量的发光器件对光电子学以至整个信息技术均具有重要意义。由于受间接带隙能带结构的限制,天然硅材料具有很低的发光效率,不利于硅光源的实现。通过采用人工改件的方法提高硅的发光效率,多孔硅、硅纳米晶体、掺Er3+硅纳米晶和硅的受激拉曼散射均是目前可实现硅发光甚至硅激光的町行途径。回顾硅发光研究的历史进程,归纳总结了近年来可实现硅发光几种方法的原理、特点以及当前的研究进展。相信随着硅发光效率的提高及器件制备工艺的发展,硅发光研究不久将出现重大突破性成果,并有可能引起新的信息技术革命。
The bottleneck of microelectronics technology and the demand for the development of information technology have accelerated the research of optoelectronics in optical information processing and optoelectronic integration on silicon-based materials. The use of silicon-based materials to produce high-quality light-emitting devices has advantages for optoelectronics and the entire information technology Significance. Due to the limitation of the band gap structure of the indirect band gap, the natural silicon material has a very low luminous efficiency, which is unfavorable to the realization of the silicon light source. Through the use of artificial modification method to improve the luminous efficiency of silicon, porous silicon, silicon nanocrystals, Er3 + -doped silicon nanocrystals and stimulated Raman scattering of silicon are all the approaches that can realize silicon light or even silicon laser. Review the history of silicon luminescence research process, summarizes the recent years, silicon luminescence can achieve several principles, characteristics and the current research progress. It is believed that with the improvement of silicon luminescence efficiency and the development of device preparation technology, there will be major breakthrough results in the study of silicon luminescence in the near future, which may lead to a new information technology revolution.