日本的东芝公司于去年11月1日发表了新一代超大规模集成电路的文章,它采用1.2μm的微细加工技术及新的元件隔离技术(BOX),在一块芯片上集成了约220万个元件的1M位动态RAM。 存取时间70ns 此超LSI,在4.78×13.23平方毫米的硅芯片上集成的元件是目前已达到实用化的最先进的超LSI-256k位DRAM的4倍,并将这种器件封装在与256k位DRAM Toshiba of Japan released a new generation of VLSI article on November 1 last year. It uses 1.2μm microfabrication technology and new element isolation technology (BOX), integrating about 2.2 million elements on one chip 1M bit dynamic RAM. Access Time 70ns The LSI, which is integrated on a 4.78 × 13.23mm2 silicon chip, is four times more compact than the most advanced LSI in the industry that has hitherto been commercialized and packaged in a 256k Bit DRAM